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Simulation of Semiconductor Devices and Processes de Heiner Ryssel

Simulation of Semiconductor Devices and Processes

Editat de Heiner Ryssel, Peter Pichler
en Limba Engleză Paperback – 20 oct 2012
SISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.
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Specificații

ISBN-13: 9783709173633
ISBN-10: 3709173639
Pagini: 520
Ilustrații: XIV, 501 p.
Dimensiuni: 170 x 244 x 27 mm
Greutate: 0.82 kg
Ediția:Softcover reprint of the original 1st ed. 1995
Editura: SPRINGER VIENNA
Colecția Springer
Locul publicării:Vienna, Austria

Public țintă

Research

Descriere

SISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.

Cuprins

Numerical Modelling and Materials Characterisation for Integrated Micro Electro Mechanical Systems.- Fast and Accurate Aerial Imaging Simulation for Layout Printability Optimization.- Efficient and Rigorous 3D Model for Optical Lithography Simulation.- Application of the Two-dimensional Numerical Simulation for the Description of Semiconductor Gas Sensors.- Analysis of Piezoresistive Effects in Silicon Structures Using Multidimensional Process and Device Simulation.- Modeling of Magnetic-Field-Sensitive GaAs Devices Using 3D Monte Carlo Simulation.- Quasi Three-Dimensional Simulation of Heat Transport in Thermal-Based Microsensors.- Simulating Deep Sub-Micron Technologies: An Industrial Perspective.- An Improved Calibration Methodology for Modeling Advanced Isolation Technologies.- Algorithms for the Reduction of Surface Evolution Discretization Error.- Polygonal Geometry Reconstruction after Cellular Etching or Deposition Simulation.- A Data-Model for a Technology and Simulation Archive.- A Programmable Tool for Interactive Wafer-State Level Data Processing.- Layout Design Rule Generation with TCAD Tools for Manufacturing.- ALAMODE: A Layered Model Development Environment.- TCAD Optimization Based on Task-Level Framework Services.- Cellular Automata Simulation of GaAs-IMPATT-Diodes.- Two-Dimensional Simulation of Deep-Trap Effects in GaAs MESFETs with Different Types of Surface States.- An Efficient Numerical Method to Solve the Time-Dependent Semiconductor Equations Including Trapped Charge.- Advances in Numerical Methods for Convective Hydrodynamic Model of Semiconductor Devices.- An Advanced Cellular Automaton Method with Interpolated Flux Scheme and its Application to Modeling of Gate Currents in Si MOSFETs.- Piezoresistance and the Drift-Diffusion Model in Strained Silicon.- A Novel Approach to HF-Noise Characterization of Heterojunction Bipolar Transistors.- Ge Profile for Minimum Neutral Base Transit Time in Si/Si1-yGey Heteroj unction Bipolar Transistors.- Performance Optimization in Si/SiGe Heterostructure FETs.- On the Integral Representations of Electrical Characteristics in Si Devices.- Large Signal Frequency Domain Device Analysis Via the Harmonic Balance Technique.- A Method for Extracting the Threshold Voltage of MOSFETs Based on Current Components.- 2-D MOSFET Simulation by Self-Consistent Solution of the Boltzmann and Poisson Equations Using a Generalized Spherical Harmonic Expansion.- Ultra High Performance, Low Power 0.2 µm CMOS Microprocessor Technology and TCAD Requirements.- Viscoelastic Modeling of Titanium Silicidation.- Multidimensional Nonlinear Viscoelastic Oxidation Modeling.- Three-Dimensional Integrated Process Simulator: 3D-MIPS.- Effect of Process-Induced Mechanical Stress on Circuit Layout.- The Simulation System for Three-Dimensional Capacitance and Current Density Calculation with a User Friendly GUI.- Numerical and Analytical Modelling of Head Resistances of Diffused Resistors.- New Spreading Resistance Effect for Sub-0.50µm MOSFETs: Model and Simulation.- The Role of SEMATECH in Enabling Global TCAD Collaboration.- Three Dimensional Simulation for Sputter Deposition Equipment and Processes.- Comprehensive Reactor, Plasma, and Profile Simulator for Plasma Etch Processes.- Modeling the Wafer Temperature in a LPCVD Furnace.- Determination of Electronic States in Low Dimensional Heterostructure and Quantum Wire Devices.- An Exponentially Fitted Finite Element Scheme for Diffusion Process Simulation on Coarse Grids.- Achievement of Quantitatively Accurate Simulation of Ion-Irradiated Bipolar Power Devices.- Modeling of Substrate Bias Effect in Bulk and SOI SiGe-channel p-MOSFETs.- A Very Fast Three-Dimensional Impurity Profile Simulation Incorporating An Accumulated Diffusion Lenght and its Application to the Design of Power MOSFETs.- Recovery of Vectorial Fields and Currents in Multidimensional Simulation.- An Efficient Approach to Solving The Boltzmann Transport Equation in Ultra-fast Transient Situations.- Modeling of a Hot Electron Injection Laser.- Scaling Considerations of Bipolar Transistors Using 3D Device Simulation.- Three-Dimensional Monte Carlo Simulation of Boron Implantation into Single-Crystal Silicon Considering Mask Structure.- A fully 2D, Analytical Model for the Geometry and Voltage Dependence of Threshold Voltage in Submicron MOSFETs.- On the Influence of Band Structure and Scattering Rates on Hot Electron Modeling.- Finite Element Monte Carlo Simulation of Recess Gate FETs.- Coupled 2D-Microscopic/Macroscopic Simulation of Nanoelectronic Heterojunction Devices.- On the Discretization of van Roosbroeck’s Equations with Magnetic Field.- Modeling of Impact Ionization in a Quasi Deterministic 3D Particle Dynamics Semiconductor Device Simulation Program.- Accurate Modeling of Ti/TiN Thin Film Sputter Deposition Processes.- Monte Carlo Simulation of InP/InGaAs HBT with a Buried Subcollector.- Design and Optimization of Millimeter-Wave IMPATT Oscillators Using a Consistent Model for Active and Passive Circuit Parts.- Generalised Drift-Diffusion Model of Bipolar Transport in Semiconductors.- Efficient 3D Unstructured Grid Algorithms for Modelling of Chemical Vapour Deposition in Horizontal Reactors.- Preventing Critical Conditions in IGBT Chopper Circuits by a Multi-Step Gate Drive Mode.- Control of Plasma Dynamics within Double-Gate-Turn-Off Thyristors (D-GTO).- A Vector Level Control Function for Generalized Octree Mesh Generation.- Comparison of Hydrodynamic Formulations for Non-Parabolic Semiconductor Device Simulations.- Influence of Analytical MOSFET Model Quality on Analog Circuit Simulation.- 2-D Adaptive Simulation of Dopant Implantation and Diffusion.- Optimization of a Recessed LOCOS Using a Tuned 2-D Process Simulator.- Simulation of Complex Planar Edge Termination Structures for Vertical IGBTs by Solving the Complete Semiconductor Device Equations.- Numerical Analysis of Hot-Electron Effects in GaAs MESFETs.- Capacitance Model of Microwave InP-Based Double Heterojunction Bipolar Transistors.- Estimation of the Charge Collection for the Soft-Error Immunity by the 3D-Device Simulation and the Quantitative Investigation.- D. C. Electrothermal Hybrid BJT Model for SPICE.- Alpha-Particle Induced Soft Error Rate Evaluation Tool and User Interface.- Hydrodynamic Modeling of Electronic Noise by the Transfer Impedance Method.- Monte Carlo Simulation of S-Type Negative Differential Conductance in Semiconductor Heterostructures.- Two-Barrier Model for Description of Charge Carriers Transport Processes in Structures with Porous Silicon.- Monte-Carlo Simulation of Inverted Hot Carrier Distribution Under Strong Carrier-Optical Phonon Scattering.- Algorithms and Models for Simulation of MOCVD of III-V Layers in the Planetary Reactor.- An Approach for Explaining Drift Phenomena in GTO Devices Using Numerical Device Simulation.- Parallel 3D Finite Element Power Semiconductor Device Simulator Based on Topologically Rectangular Grid.- Investigation of Silicon Carbide Diode Structures via Numerical Simulations Including Anisotropic Effects.- A New Physical Compact Model of CLBTs for Circuit Simulation Including Two-Dimensional Calculations.- Combining 2D and 3D Device Simulation with Circuit Simulation for Optimising High Efficiency Silicon Solar Cells.- A New Quasi-two Dimensional HEMT Model.- Simulations of the Forward Behaviour of Hybrid Schottky-/pn-Diodes.- HFET Breakdown Study by 2D and Quasi 2D Simulations: Topology Influence.- Investigation of GTO Turn-on in an Inverter Circuit at Low Temperatures Using 2-D Electrothermal Simulation.- Large Scale Thermal Mixed Mode Device and Circuit Simulation.- Scaling of Conventional MOSFET’s to the 0.1 µm Regime.- Monte Carlo Simulation of Carrier Capture at Deep Centers for Silicon and Gallium Arsenide Devices.- A New Statistical Enhancement Technique in Parallelized Monte Carlo Device Simulation.- Stability Issues in Self-Consistent Monte Carlo-Poisson Simulations.- The Path Integral Monte Carlo Method for Quantum Transport on a Parallel Computer.- A Monte Carlo Transport Model Based on Sperical Harmonics Expansion of the Valence Bands.- Full-Band Monte Carlo Transport Calculation in an Integrated Simulation Platform.- On Particle-Mesh Coupling in Monte Carlo Semiconductor Device Simulation.- T2CAD: Total Design for Sub-µm Process and Device Optimization with Technology-CAD.- Modelling Impact-Ionization in the Framework of the Spherical-Harmonics Expansion of the Boltzmann Transport Equation with Full-Band Structure Effects.- Impact Ionization Model Using Second- and Fourth-Order Moments of Distribution Functions.- An Accurate NMOS Mobility Model for 0.25µm MOSFETs.- A 2-D Modeling of Metal-Oxide-Polycrystalline Silicon-Silicon (MOPS) Structures for the Determination of Interface State and Grain Boundary State Distributions.- Sensitivity Analysis of an Industrial CMOS Process Using RSM Techniques.- Process- and Devicesimulation of Very High Speed Vertical MOS Transistors.- Two-Dimensional Transient Simulation of Charge-Coupled Devices Using MINIMOS NT.- Determination of Vacancy Diffusivity in Silicon for Process Simulation.- Precipitation Phenomena and Transient Diffusion/Activation During High Concentration Boron Annealing.- Modelling of Silicon Interstitial Surface Recombination Velocity at Non-Oxidizing Interfaces.- Efficient Hybrid Solution of Sparse Linear Systems.- Mesh Generation for 3D Process Simulation and the Moving Boundary Problem.- Three-Dimensional Grid Adaption Using a Mixed-Element Decomposition Method.- Unified Grid Generation and Adaptation for Device Simulation.- Platinum Diffusion at Low Temperatures.- Lattice Monte—Carlo Simulations of Vacancy-Mediated Diffusion and Implications for Continuum Models of Coupled Diffusion.- A New Hydrodynamic Equation for Ion-Implantation Simulation.- Monte Carlo Simulation of Multiple-Species Ion Implantation and its Application to the Modeling of 0.1µ PMOS Devices.- Analytical Model for Phosphorus Large Angle Tilted Implantation.- Statistical Accuracy and CPU Time Characteristic of Three Trajectory Split Methods for Monte Carlo Simulation of Ion Implantation.- Author Index.