Ultra-Low Voltage Nano-Scale Memories: Integrated Circuits and Systems
Editat de Kiyoo Itoh, Masashi Horiguchi, Hitoshi Tanakaen Limba Engleză Hardback – 22 aug 2007
Toate formatele și edițiile | Preț | Express |
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Paperback (1) | 685.77 lei 6-8 săpt. | |
Springer Us – 19 noi 2010 | 685.77 lei 6-8 săpt. | |
Hardback (1) | 932.79 lei 6-8 săpt. | |
Springer Us – 22 aug 2007 | 932.79 lei 6-8 săpt. |
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Specificații
ISBN-13: 9780387333984
ISBN-10: 0387333983
Pagini: 346
Ilustrații: XI, 346 p. 290 illus.
Dimensiuni: 155 x 235 x 24 mm
Greutate: 0.64 kg
Ediția:2007
Editura: Springer Us
Colecția Springer
Seria Integrated Circuits and Systems
Locul publicării:New York, NY, United States
ISBN-10: 0387333983
Pagini: 346
Ilustrații: XI, 346 p. 290 illus.
Dimensiuni: 155 x 235 x 24 mm
Greutate: 0.64 kg
Ediția:2007
Editura: Springer Us
Colecția Springer
Seria Integrated Circuits and Systems
Locul publicării:New York, NY, United States
Public țintă
Academic/professional/technical: UndergraduateCuprins
An Introduction to LSI Design.- Ultra-Low Voltage Nano-Scale DRAM Cells.- Ultra-Low Voltage Nano-Scale SRAM Cells.- Leakage Reduction for Logic Circuits in RAMs.- Variability Issue in the Nanometer Era.- Reference Voltage Generators.- Voltage Down-Converters.- Voltage Up-Converters and Negative Voltage Generators.- High-Voltage Tolerant Circuits.
Textul de pe ultima copertă
Ultra-Low Voltage Nano-Scale Memories provides an in-depth discussion of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically covered in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs. Moreover, various kinds of on-chip voltage converters necessary to solve problems with internal power-supply managements are extensively discussed. This authoritative monograph addresses these design challenges for memory and circuit engineers as well as for researchers and students who are interested in ultra-low voltage nano-scale memory LSIs.
Caracteristici
Discusses the emerging problems between the device, circuit, and system levels in terms of reliable high-speed operations of memory cells and peripheral logic circuits Presents the essential differences in ultra-low voltage operations between DRAMs and SRAMs Covers the basics to the state of the art