Cantitate/Preț
Produs

Ultra-Low Voltage Nano-Scale Memories: Integrated Circuits and Systems

Editat de Kiyoo Itoh, Masashi Horiguchi, Hitoshi Tanaka
en Limba Engleză Paperback – 19 noi 2010
Ultra-Low Voltage Nano-Scale Memories provides an in-depth discussion of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically covered in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs. Moreover, various kinds of on-chip voltage converters necessary to solve problems with internal power-supply managements are extensively discussed. This authoritative monograph addresses these design challenges for memory and circuit engineers as well as for researchers and students who are interested in ultra-low voltage nano-scale memory LSIs.
Citește tot Restrânge

Toate formatele și edițiile

Toate formatele și edițiile Preț Express
Paperback (1) 69476 lei  43-57 zile
  Springer Us – 19 noi 2010 69476 lei  43-57 zile
Hardback (1) 94506 lei  43-57 zile
  Springer Us – 22 aug 2007 94506 lei  43-57 zile

Din seria Integrated Circuits and Systems

Preț: 69476 lei

Preț vechi: 81737 lei
-15% Nou

Puncte Express: 1042

Preț estimativ în valută:
13306 13709$ 11146£

Carte tipărită la comandă

Livrare economică 24 februarie-10 martie

Preluare comenzi: 021 569.72.76

Specificații

ISBN-13: 9781441941244
ISBN-10: 144194124X
Pagini: 360
Ilustrații: XI, 346 p. 290 illus.
Dimensiuni: 155 x 235 x 19 mm
Greutate: 0.5 kg
Ediția:Softcover reprint of hardcover 1st ed. 2007
Editura: Springer Us
Colecția Springer
Seria Integrated Circuits and Systems

Locul publicării:New York, NY, United States

Public țintă

Professional/practitioner

Cuprins

An Introduction to LSI Design.- Ultra-Low Voltage Nano-Scale DRAM Cells.- Ultra-Low Voltage Nano-Scale SRAM Cells.- Leakage Reduction for Logic Circuits in RAMs.- Variability Issue in the Nanometer Era.- Reference Voltage Generators.- Voltage Down-Converters.- Voltage Up-Converters and Negative Voltage Generators.- High-Voltage Tolerant Circuits.

Textul de pe ultima copertă

Ultra-Low Voltage Nano-Scale Memories provides an in-depth discussion of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically covered in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs. Moreover, various kinds of on-chip voltage converters necessary to solve problems with internal power-supply managements are extensively discussed. This authoritative monograph addresses these design challenges for memory and circuit engineers as well as for researchers and students who are interested in ultra-low voltage nano-scale memory LSIs.

Caracteristici

Discusses the emerging problems between the device, circuit, and system levels in terms of reliable high-speed operations of memory cells and peripheral logic circuits Presents the essential differences in ultra-low voltage operations between DRAMs and SRAMs Covers the basics to the state of the art