Testing Static Random Access Memories: Defects, Fault Models and Test Patterns: Frontiers in Electronic Testing, cartea 26
Autor Said Hamdiouien Limba Engleză Hardback – 31 mar 2004
Features:
-Fault primitive based analysis of memory faults,
-A complete framework of and classification memory faults,
-A systematic way to develop optimal and high quality memory test algorithms,
-A systematic way to develop test patterns for any multi-port SRAM,
-Challenges and trends in embedded memory testing.
Toate formatele și edițiile | Preț | Express |
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Paperback (1) | 637.78 lei 6-8 săpt. | |
Springer Us – 9 dec 2010 | 637.78 lei 6-8 săpt. | |
Hardback (1) | 644.30 lei 6-8 săpt. | |
Springer Us – 31 mar 2004 | 644.30 lei 6-8 săpt. |
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Specificații
ISBN-13: 9781402077524
ISBN-10: 1402077521
Pagini: 244
Ilustrații: XX, 221 p.
Dimensiuni: 155 x 235 x 19 mm
Greutate: 0.53 kg
Ediția:2004
Editura: Springer Us
Colecția Springer
Seria Frontiers in Electronic Testing
Locul publicării:New York, NY, United States
ISBN-10: 1402077521
Pagini: 244
Ilustrații: XX, 221 p.
Dimensiuni: 155 x 235 x 19 mm
Greutate: 0.53 kg
Ediția:2004
Editura: Springer Us
Colecția Springer
Seria Frontiers in Electronic Testing
Locul publicării:New York, NY, United States
Public țintă
ResearchCuprins
I Introductory.- 1 Introduction.- 2 Semiconductor memory architecture.- 3 Space of memory faults.- 4 Preparation for circuit simulation.- II Testing single-port and two-port SRAMs.- 5 Experimental analysis of two-port SRAMs.- 6 Tests for single-port and two-port SRAMs.- 7 Testing restricted two-port SRAMs.- III Testing p-port SRAMs.- 8 Experimental analysis of p-port SRAMs.- 9 Tests for p-port SRAMs.- 10 Testing restricted p-port SRAMs.- 11 Trends in embedded memory testing.- A Simulation results for two-port SRAMs.- A.1 Simulation results for opens.- A.2 Simulation results for shorts.- A.3 Simulation results for bridges.- B Simulation results for three-port SRAMs.- B.1 Simulation results for opens and shorts.- B.2 Simulation results for bridges.
Recenzii
From the reviews:
"Static random access memories (SRAMs) enjoy a strategic position in the microelectronic industry. … This book concentrates on the study of fault modeling, testing and test strategies for SRAMs. … The book provides a well-written coverage in the area of single-, two- and n-port SRAM testing, fault modeling, and simulation. It is well-organized and very timely. … The book promises to make valuable contribution to the education of graduate students … . I highly recommend this book … ." (Mile Stojcev, Microelectronics Reliability, Vol. 45, 2005)
"Static random access memories (SRAMs) enjoy a strategic position in the microelectronic industry. … This book concentrates on the study of fault modeling, testing and test strategies for SRAMs. … The book provides a well-written coverage in the area of single-, two- and n-port SRAM testing, fault modeling, and simulation. It is well-organized and very timely. … The book promises to make valuable contribution to the education of graduate students … . I highly recommend this book … ." (Mile Stojcev, Microelectronics Reliability, Vol. 45, 2005)